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LS425{P-DIP} PDF预览

LS425{P-DIP}

更新时间: 2024-11-01 19:34:11
品牌 Logo 应用领域
凌特 - Linear 放大器光电二极管晶体管
页数 文件大小 规格书
2页 178K
描述
40V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC, DIP-8

LS425{P-DIP} 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DIP
包装说明:IN-LINE, R-PDIP-T8针数:8
Reach Compliance Code:compliant风险等级:5.11
其他特性:LOW DRIFT配置:SEPARATE, 2 ELEMENTS
最小漏源击穿电压:40 VFET 技术:JUNCTION
最大反馈电容 (Crss):1.5 pFJESD-30 代码:R-PDIP-T8
元件数量:2端子数量:8
工作模式:DEPLETION MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子面层:NOT SPECIFIED
端子形式:THROUGH-HOLE端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

LS425{P-DIP} 数据手册

 浏览型号LS425{P-DIP}的Datasheet PDF文件第2页 

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